US 12,082,514 B2
Lead-free metallic halide memristor and electronic element comprising the same
Hao-Wu Lin, Hsinchu (TW); Tsung-Kai Su, Taichung (TW); Wei-Kai Cheng, Hsinchu (TW); and Cheng-Yueh Chen, Taichung (TW)
Assigned to NATIONAL TSING HUA UNIVERSITY, Hsinchu (TW)
Filed by National Tsing Hua University, Hsinchu (TW)
Filed on Jan. 20, 2022, as Appl. No. 17/580,481.
Claims priority of application No. 110143741 (TW), filed on Nov. 24, 2021.
Prior Publication US 2023/0165172 A1, May 25, 2023
Int. Cl. H10N 70/00 (2023.01); G06N 3/065 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/881 (2023.02) [G06N 3/065 (2023.01); H10B 63/80 (2023.02); H10N 70/24 (2023.02); H10N 70/841 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A lead-free metallic halide memristor, comprising:
a first electrode layer;
an active layer, being formed on the first electrode layer;
a second electrode layer, being formed on the active layer; and
a first interfacial modification layer, being formed between the first electrode layer and the active layer, and being made of a material selected from a group consisting of oxide semiconductor and organic semiconductor;
wherein the active layer is made of a metallic halide material comprising a general formula MXn;
wherein M is selected from a group consisting of Li, Na, K, Rb, Cs, Mg, and X being selected from a group consisting of F, Cl, Br, and I;
wherein n is 1 or 2.