CPC H10N 70/8416 (2023.02) [G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H10B 63/80 (2023.02); H10N 70/011 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/8418 (2023.02); H10N 70/882 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02); G11C 2013/0045 (2013.01); G11C 2013/005 (2013.01); G11C 2013/0078 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/13 (2013.01); G11C 2213/52 (2013.01); G11C 2213/73 (2013.01)] | 20 Claims |
1. A memory device, comprising:
a self-selecting memory component;
a top electrode in physical contact with a digit line and comprising a first interface with the self-selecting memory component having a first contact area; and
a bottom electrode in physical contact with a word line and comprising a second interface with the self-selecting memory component having a second contact area that is less than the first contact area of the first interface.
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