US 12,082,511 B2
Magnetic random access memory
Baohua Niu, Portland, OR (US); and Ji-Feng Ying, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 27, 2022, as Appl. No. 17/850,225.
Application 16/939,613 is a division of application No. 15/906,901, filed on Feb. 27, 2018, granted, now 10,727,401, issued on Jul. 28, 2020.
Application 17/850,225 is a continuation of application No. 16/939,613, filed on Jul. 27, 2020, granted, now 11,374,169, issued on Jun. 28, 2022.
Claims priority of provisional application 62/584,529, filed on Nov. 10, 2017.
Prior Publication US 2022/0336730 A1, Oct. 20, 2022
Int. Cl. H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01L 21/62 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 59/00 (2023.01)
CPC H10N 50/85 (2023.02) [G11C 11/161 (2013.01); H01L 21/62 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 59/00 (2023.02); G11C 11/1673 (2013.01); H10B 61/22 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory cell of a magnetic random access memory, comprising:
a first electrode layer;
a seed layer disposed over the first electrode layer;
a pinned magnetic layer disposed over the seed layer;
a tunneling barrier layer made of a non-magnetic material and disposed over the pinned magnetic layer;
a free magnetic layer disposed over the tunneling barrier layer; and
a second electrode layer disposed over the free magnetic layer,
wherein at least one of the first electrode layer or the second electrode layer comprises one selected from the group consisting of an iridium-only layer, a bilayer structure of an iridium layer and an iridium oxide layer, a bilayer structure of an iridium layer and a tantalum layer, and a binary alloy layer of iridium and tantalum.