US 12,082,475 B2
Display panel and method for fabricating same
Gaobo Lin, Shenzhen (CN)
Assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
Appl. No. 17/055,659
Filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
PCT Filed Sep. 23, 2020, PCT No. PCT/CN2020/116977
§ 371(c)(1), (2) Date Nov. 16, 2020,
PCT Pub. No. WO2022/047851, PCT Pub. Date Mar. 10, 2022.
Claims priority of application No. 202010913140.3 (CN), filed on Sep. 3, 2020.
Prior Publication US 2023/0189570 A1, Jun. 15, 2023
Int. Cl. H10K 59/80 (2023.01); H10K 59/12 (2023.01); H10K 59/122 (2023.01); H10K 71/00 (2023.01)
CPC H10K 59/80522 (2023.02) [H10K 59/1201 (2023.02); H10K 59/122 (2023.02); H10K 59/80515 (2023.02); H10K 59/80521 (2023.02); H10K 59/873 (2023.02); H10K 59/8792 (2023.02); H10K 71/00 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A display panel, comprising:
an array substrate comprising a source electrode, a drain electrode, a first auxiliary electrode, and a protective layer disposed on the first auxiliary electrode, wherein the first auxiliary electrode, the source electrode, and the drain electrode are formed of a same material on a same layer;
a second auxiliary electrode disposed on the protective layer and connected to the first auxiliary electrode;
an undercut structure formed on the protective layer, extending to directly below the second auxiliary electrode, and exposing the first auxiliary electrode;
a flat layer disposed on the second auxiliary electrode and the protective layer;
an anode electrode disposed on the flat layer;
a pixel defining layer disposed on the anode electrode and the flat layer, and provided with a first opening connected to the undercut structure;
an organic light-emitting layer disposed on the pixel defining layer and not completely covering an exposed part of the first auxiliary electrode; and
a cathode electrode disposed on the organic light-emitting layer, extending into the undercut structure, and connected to the first auxiliary electrode;
wherein the array substrate further comprises:
a base substrate;
a light-shielding metal layer disposed directly on the base substrate,
a first electrode plate disposed directly on the base substrate, wherein the light-shielding metal layer and the first electrode plate are disposed in a same layer;
a buffer layer disposed on the light-shielding metal layer and the first electrode plate;
an amorphous oxide semiconductor layer disposed directly on the buffer layer; and
a second electrode plate disposed directly on the buffer layer, wherein the amorphous oxide semiconductor layer and the second electrode plate are disposed in a same layer;
wherein the first electrode plate and the second electrode plate form a capacitor structure;
wherein the undercut structure has a depth into the second auxiliary electrode of 0.1 μm to 1 μm.