US 12,082,472 B2
Color filter substrate, manufacturing method thereof, and display panel
Liangfen Zhang, Guangdong (CN)
Assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
Appl. No. 17/054,536
Filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong (CN)
PCT Filed Oct. 23, 2020, PCT No. PCT/CN2020/123207
§ 371(c)(1), (2) Date Nov. 11, 2020,
PCT Pub. No. WO2022/047929, PCT Pub. Date Mar. 10, 2022.
Claims priority of application No. 202010927053.3 (CN), filed on Sep. 7, 2020.
Prior Publication US 2022/0320181 A1, Oct. 6, 2022
Int. Cl. H10K 59/122 (2023.01); G02F 1/1335 (2006.01); H10K 50/86 (2023.01); H10K 59/38 (2023.01); H10K 71/00 (2023.01)
CPC H10K 59/38 (2023.02) [G02F 1/133512 (2013.01); G02F 1/133516 (2013.01); H10K 50/865 (2023.02); H10K 59/122 (2023.02); H10K 71/00 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A color filter substrate, comprising a first substrate, a color resist layer, an overcoat layer, and a quantum dot layer, which are sequentially stacked along a first direction;
wherein the color resist layer is provided with a plurality of sub-color resist layers with different colors arranged along a second direction, and there is no black matrix disposed between two adjacent sub-color resist layers; and
the quantum dot layer is divided into a plurality of quantum dot areas arranged along the second direction, a plurality of banks are disposed between and correspond to two adjacent quantum dot areas, and the banks are black;
wherein the banks have a predetermined transmittance t within a visible light range, the predetermined transmittance t of the banks is less than 5% when a wavelength of ambient light L is greater than 350 nm and less than 510 nm, and the predetermined transmittance t of the banks is greater than 90% when the wavelength of ambient light L is greater than 650 nm.