US 12,082,429 B2
Light-emitting device, light-emitting apparatus, electronic device, and lighting device
Satoshi Seo, Kanagawa (JP); Tsunenori Suzuki, Kanagawa (JP); Takumu Okuyama, Kanagawa (JP); Yusuke Takita, Kanagawa (JP); Naoaki Hashimoto, Kanagawa (JP); Hiromi Seo, Kanagawa (JP); Nobuharu Ohsawa, Kanagawa (JP); Toshiki Sasaki, Kanagawa (JP); and Shunpei Yamazaki, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/048,642
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Oct. 3, 2019, PCT No. PCT/IB2019/058406
§ 371(c)(1), (2) Date Oct. 19, 2020,
PCT Pub. No. WO2020/075014, PCT Pub. Date Apr. 16, 2020.
Claims priority of application No. 2018-191678 (JP), filed on Oct. 10, 2018; application No. 2018-191681 (JP), filed on Oct. 10, 2018; application No. 2018-191887 (JP), filed on Oct. 10, 2018; application No. 2018-225260 (JP), filed on Nov. 30, 2018; application No. 2019-020057 (JP), filed on Feb. 6, 2019; and application No. 2019-087060 (JP), filed on Apr. 30, 2019.
Prior Publication US 2021/0249619 A1, Aug. 12, 2021
Int. Cl. H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/17 (2023.01); H10K 85/60 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01); H10K 85/30 (2023.01); H10K 101/10 (2023.01)
CPC H10K 50/11 (2023.02) [H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/17 (2023.02); H10K 85/30 (2023.02); H10K 85/342 (2023.02); H10K 85/615 (2023.02); H10K 85/622 (2023.02); H10K 85/626 (2023.02); H10K 85/636 (2023.02); H10K 85/657 (2023.02); H10K 85/6572 (2023.02); H10K 85/6574 (2023.02); H10K 85/6576 (2023.02); H10K 2101/10 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02)] 26 Claims
OG exemplary drawing
 
1. A light-emitting device comprising:
an anode;
a cathode; and
an EL layer between the anode and the cathode,
wherein the EL layer comprises a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from an anode side,
wherein the first layer is in contact with the anode,
wherein the fourth layer is in contact with the light-emitting layer,
wherein the first layer comprises a first organic compound and a second organic compound,
wherein the second layer comprises a third organic compound,
wherein the third layer comprises a fourth organic compound,
wherein the light-emitting layer comprises a fifth organic compound and a sixth organic compound,
wherein the fourth layer comprises a seventh organic compound and an eighth substance,
wherein the first organic compound exhibits an electron-accepting property with respect to the second organic compound,
wherein the fifth organic compound is an emission center substance,
wherein a HOMO level of the second organic compound is higher than or equal to −5.7 eV and lower than or equal to −5.4 eV, and
wherein the eighth substance is an organic complex.