US 12,082,419 B2
Semiconductor structure and forming method therefor, and memory and forming method therefor
Yiming Zhu, Hefei (CN); and Erxuan Ping, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Aug. 10, 2021, as Appl. No. 17/444,785.
Application 17/444,785 is a continuation of application No. PCT/CN2021/086466, filed on Apr. 12, 2021.
Claims priority of application No. 202010344169.4 (CN), filed on Apr. 27, 2020.
Prior Publication US 2021/0375939 A1, Dec. 2, 2021
Int. Cl. H10B 51/20 (2023.01); G11C 7/18 (2006.01); H10B 51/10 (2023.01)
CPC H10B 51/20 (2023.02) [G11C 7/18 (2013.01); H10B 51/10 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
providing a substrate, wherein a sacrificial layer and an active layer on the sacrificial layer are formed on the substrate;
etching the active layer and the sacrificial layer to form active lines along a first direction;
forming a first isolation layer that fills spacing between the active lines;
etching end portions of the active lines to form openings exposing the sacrificial layer;
removing the sacrificial layer along the openings, and forming gaps between a bottom of the active lines and the substrate;
filling the gaps with a conductive material to form bit lines extending along the first direction;
patterning the active lines to form a plurality of active columns that are discrete, the plurality of active columns being arranged in an array along the first direction and a second direction; and
forming a first doped region, a channel region, and a second doped region that are located on a bottom of an active column and sequentially arranged upwards, and forming a gate structure surrounding the channel region;
wherein a method for forming the first doped region comprises: forming a transitional layer with doping elements on the substrate between adjacent active lines or active columns, after the active lines or active columns are formed; and through diffusion treatment, diffusing at least part of the doping elements in the transitional layer into the active line or the active column to form the first doped region.