US 12,082,414 B2
Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same
Jianzhong Wu, Wuhan (CN); Zongke Xu, Wuhan (CN); and Jingjing Geng, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Jun. 11, 2021, as Appl. No. 17/344,949.
Application 17/344,949 is a division of application No. 16/881,173, filed on May 22, 2020, granted, now 11,502,098.
Application 16/881,173 is a continuation of application No. PCT/CN2020/086575, filed on Apr. 24, 2020.
Prior Publication US 2021/0335812 A1, Oct. 28, 2021
Int. Cl. H10B 43/27 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 43/10 (2023.02); H10B 43/35 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A three-dimensional (3D) memory device, comprising:
a core region, comprising:
a first drain-select-gate (DSG) cut structure extending along a first direction and a vertical direction; and
a dummy channel structure located under the first DSG cut structure and extending along the vertical direction; and
a staircase region comprising a plurality of stairs each comprising at least a conductor/dielectric pair extending in the first direction, the staircase region comprising:
a second drain-select-gate (DSG) cut structure extending along the first direction and the vertical direction, and
a plurality of support structures extending in the second DSG cut structure along the vertical direction, wherein of at least one of the support structures, a dimension along the first direction is greater than a dimension along a second direction perpendicular to the first direction,
wherein the first DSG cut structure in the core region is aligned with the second DSG cut structure in the staircase region along the first direction.