US 12,082,404 B2
Semiconductor device and electronic system including the same
Youngmo Ku, Seongnam-si (KR); Wookhyoung Lee, Seongnam-si (KR); Kang-Sup Roh, Osan-si (KR); Seongjun Seo, Hwaseong-si (KR); and Yongin Cho, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 21, 2021, as Appl. No. 17/557,501.
Claims priority of application No. 10-2021-0056436 (KR), filed on Apr. 30, 2021.
Prior Publication US 2022/0352194 A1, Nov. 3, 2022
Int. Cl. H10B 41/27 (2023.01); H01L 23/522 (2006.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01)
CPC H10B 41/27 (2023.02) [H01L 23/5226 (2013.01); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H01L 24/32 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 2224/32145 (2013.01); H01L 2924/14511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate that includes a cell array region and a connection region;
an electrode structure that extends in a first direction on the substrate, the electrode structure including a plurality of electrodes that are vertically stacked, the electrodes having pad sections that are arranged stepwise on the connection region;
a first contact plug connected to a first one of the pad sections;
a pair of first vertical structures that penetrate the first one of the pad sections and are spaced apart from each other in the first direction by a first distance;
a second contact plug connected to a second one of the pad sections and having a vertical length that is greater than a vertical length of the first contact plug; and
a pair of second vertical structures that penetrate the second one of the pad sections and are spaced apart from each other in the first direction by a second distance,
wherein the second distance is greater than the first distance.