US 12,082,398 B2
Capacitor structure and method of forming thereof
Jyun-Hua Yang, Taipei (TW); and Kai Hung Lin, Taichung (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Aug. 29, 2023, as Appl. No. 18/457,366.
Application 18/457,366 is a division of application No. 17/659,845, filed on Apr. 20, 2022, granted, now 11,778,809.
Prior Publication US 2023/0413527 A1, Dec. 21, 2023
Int. Cl. H10B 12/00 (2023.01); H01L 49/02 (2006.01)
CPC H10B 12/315 (2023.02) [H01L 28/40 (2013.01); H01L 28/60 (2013.01); H10B 12/033 (2023.02); H10B 12/34 (2023.02)] 4 Claims
OG exemplary drawing
 
1. A capacitor structure, comprising:
a first electrode;
a hafnium-zirconium oxide (HZO) layer formed over the first electrode;
an interface dielectric layer formed over the HZO layer;
a second electrode formed over the interface dielectric layer, wherein the HZO layer and the interface dielectric layer are located between the first electrode and the second electrode, a first concentration of tetragonal crystal phase of the HZO layer is greater than a second concentration of tetragonal crystal phase of the interface dielectric layer; and
a germanium structure in contact with the second electrode.