CPC H10B 12/315 (2023.02) [H01L 28/40 (2013.01); H01L 28/60 (2013.01); H10B 12/033 (2023.02); H10B 12/34 (2023.02)] | 4 Claims |
1. A capacitor structure, comprising:
a first electrode;
a hafnium-zirconium oxide (HZO) layer formed over the first electrode;
an interface dielectric layer formed over the HZO layer;
a second electrode formed over the interface dielectric layer, wherein the HZO layer and the interface dielectric layer are located between the first electrode and the second electrode, a first concentration of tetragonal crystal phase of the HZO layer is greater than a second concentration of tetragonal crystal phase of the interface dielectric layer; and
a germanium structure in contact with the second electrode.
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