US 12,082,396 B2
Semiconductor device and method for fabricating the same
Kun Young Lee, Gyeonggi-do (KR); and Seo Hyun Kim, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jul. 8, 2022, as Appl. No. 17/860,284.
Application 17/860,284 is a continuation of application No. 16/935,848, filed on Jul. 22, 2020, granted, now 11,411,005.
Claims priority of application No. 10-2020-0034528 (KR), filed on Mar. 20, 2020.
Prior Publication US 2022/0344346 A1, Oct. 27, 2022
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/033 (2023.02) [H10B 12/31 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a plurality of bottom electrodes over the substrate;
a supporter disposed between the bottom electrodes to support outer walls of the bottom electrodes in a direction parallel to the surface of the substrate; and
a supporter reinforcement layer between the outer walls of the bottom electrodes and the supporter,
wherein each of the plurality of bottom electrodes includes a first portion supported by the supporter reinforcement layer and a second portion not supported by the supporter reinforcement layer, the first portion narrower than the second portion.