	US 12,082,395 B2
	Semiconductor memory devices and methods of fabricating the same
Kyooho Jung, Seoul (KR); Jeong-Gyu Song, Seongnam-si (KR); Younsoo Kim, Yongin-si (KR); and Jooho Lee, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 20, 2021, as Appl. No. 17/407,836.
Application 17/407,836 is a continuation in part of application No. 16/795,625, filed on Feb. 20, 2020, granted, now 11,239,239.
Claims priority of application No. 10-2019-0070993 (KR), filed on Jun. 14, 2019.
Prior Publication US 2021/0384197 A1, Dec. 9, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01)

CPC H10B 12/033 (2023.02) [H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 28/75 (2013.01); H01L 28/91 (2013.01); H10B 12/315 (2023.02)]

20 Claims

1. A method of fabricating a semiconductor memory device, the method comprising:

depositing a first zirconium oxide layer on a substrate;

depositing a first aluminum oxide layer on the first zirconium oxide layer;

depositing a second zirconium oxide layer on the first aluminum oxide layer;

performing a first annealing process that causes aluminum atoms in the first aluminum oxide layer to diffuse into the first zirconium oxide layer and the second zirconium oxide layer, thereby forming a preliminary dielectric layer that includes a first diffusion region and a second diffusion region; and

depositing a second aluminum oxide layer on the preliminary dielectric layer.