CPC H10B 12/00 (2023.02) [H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/66969 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01)] | 7 Claims |
1. A method for manufacturing a semiconductor device, comprising:
depositing a first insulator, a first oxide film, a second oxide film, a first conductive film, a first insulating film, and a second conductive film in this order over a substrate;
processing the first oxide film, the second oxide film, the first conductive film, the first insulating film, and the second conductive film into an island shape to form a first oxide, a second oxide, a first conductive layer, a first insulating layer, and a second conductive layer;
forming a layer to cover the first oxide, the second oxide, the first conductive layer, the first insulating layer, and the second conductive layer in the processing;
removing the second conductive layer and the layer;
depositing a second insulating film over the first insulator, the first oxide, the second oxide, the first conductive layer, and the first insulating layer;
performing anisotropic etching on the second insulating film to form a second insulating layer in contact with side surfaces of the first oxide, the second oxide, the first conductive layer, and the first insulating layer;
forming a second insulator over the first insulator, the first oxide, the second oxide, the first conductive layer, the first insulating layer, and the second insulating layer;
forming an opening reaching the second oxide, in the first conductive layer, the first insulating layer, the second insulating layer, and the second insulator;
forming a first conductor and a second conductor from the first conductive layer, forming a third insulator and a fourth insulator from the first insulating layer, and forming a fifth insulator and a sixth insulator from the second insulating layer in the formation of the opening; and
forming a third oxide, a seventh insulator over the third oxide, and a third conductor over the seventh insulator, in the opening.
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