US 12,082,390 B2
Method for manufacturing semiconductor device
Shunpei Yamazaki, Tokyo (JP); Shinya Sasagawa, Kanagawa (JP); Shunichi Ito, Kanagawa (JP); Erika Takahashi, Kanagawa (JP); and Tetsuya Kakehata, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Appl. No. 17/439,500
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Mar. 19, 2020, PCT No. PCT/IB2020/052490
§ 371(c)(1), (2) Date Sep. 15, 2021,
PCT Pub. No. WO2020/201873, PCT Pub. Date Oct. 8, 2020.
Claims priority of application No. 2019-066884 (JP), filed on Mar. 29, 2019.
Prior Publication US 2022/0157817 A1, May 19, 2022
Int. Cl. H01L 27/108 (2006.01); H01L 27/12 (2006.01); H01L 29/00 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01)
CPC H10B 12/00 (2023.02) [H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/66969 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
depositing a first insulator, a first oxide film, a second oxide film, a first conductive film, a first insulating film, and a second conductive film in this order over a substrate;
processing the first oxide film, the second oxide film, the first conductive film, the first insulating film, and the second conductive film into an island shape to form a first oxide, a second oxide, a first conductive layer, a first insulating layer, and a second conductive layer;
forming a layer to cover the first oxide, the second oxide, the first conductive layer, the first insulating layer, and the second conductive layer in the processing;
removing the second conductive layer and the layer;
depositing a second insulating film over the first insulator, the first oxide, the second oxide, the first conductive layer, and the first insulating layer;
performing anisotropic etching on the second insulating film to form a second insulating layer in contact with side surfaces of the first oxide, the second oxide, the first conductive layer, and the first insulating layer;
forming a second insulator over the first insulator, the first oxide, the second oxide, the first conductive layer, the first insulating layer, and the second insulating layer;
forming an opening reaching the second oxide, in the first conductive layer, the first insulating layer, the second insulating layer, and the second insulator;
forming a first conductor and a second conductor from the first conductive layer, forming a third insulator and a fourth insulator from the first insulating layer, and forming a fifth insulator and a sixth insulator from the second insulating layer in the formation of the opening; and
forming a third oxide, a seventh insulator over the third oxide, and a third conductor over the seventh insulator, in the opening.