CPC H03H 9/56 (2013.01) [H03H 3/02 (2013.01); H03H 9/0504 (2013.01); H03H 9/13 (2013.01); H03H 9/17 (2013.01)] | 18 Claims |
1. A film bulk acoustic resonator, comprising:
a first substrate and a support layer disposed on the first substrate, wherein a cavity is formed in the support layer;
a piezoelectric stacked layer covering the cavity, wherein the piezoelectric stacked layer includes a first electrode, a piezoelectric layer, and a second electrode which are sequentially disposed on the support layer, and the piezoelectric stacked layer includes an active resonance region above a center of the cavity and an inactive resonance region surrounding the active resonance region; and
at least two trenches, arranged at a junction of the active resonance region and the inactive resonance region to define a range of the active resonance region, wherein the at least two trenches include a first trench and a second trench; the second trench passes through the second electrode layer and the piezoelectric layer; and the first trench passes the first electrode and the piezoelectric layer and is connected to the cavity, wherein:
an angle between a sidewall of the first trench and a plane of the second electrode is an obtuse angle, and an angle between a sidewall of the second trench and a plane of the first electrode is an obtuse angle.
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