US 12,081,190 B2
Acoustic wave device
Katsuya Daimon, Nagaokakyo (JP); Hiromu Okunaga, Nagaokakyo (JP); and Takuya Koyanagi, Nagaokakyo (JP)
Assigned to MURATA MANUFACTURING CO., LTD., Kyoto (JP)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP)
Filed on Nov. 24, 2020, as Appl. No. 17/102,468.
Application 17/102,468 is a continuation of application No. PCT/JP2019/026346, filed on Jul. 2, 2019.
Claims priority of application No. 2018-127006 (JP), filed on Jul. 3, 2018.
Prior Publication US 2021/0111697 A1, Apr. 15, 2021
Int. Cl. H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/25 (2006.01); H03H 9/64 (2006.01)
CPC H03H 9/02574 (2013.01) [H03H 9/02015 (2013.01); H03H 9/02228 (2013.01); H03H 9/058 (2013.01); H03H 9/25 (2013.01); H03H 9/6483 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An acoustic wave device comprising:
a support substrate; and
a first resonant section and a second resonant section that are adjacent to each other on the support substrate; wherein
each of the first resonant section and the second resonant section includes:
a piezoelectric thin film;
an interdigital transducer electrode on the piezoelectric thin film; and
a support layer surrounding the piezoelectric thin film in a plan view of the acoustic wave device, and having a different linear expansion coefficient from the piezoelectric thin film;
the piezoelectric thin film in the first resonant section and the piezoelectric thin film in the second resonant section are divided by the support layer between the first resonant section and the second resonant section; and
a projection projecting in a first direction toward the support substrate from the first resonant section and the second resonant section is provided in an edge portion of a surface of the support layer, the surface being located on a side closer to the support substrate.