US 12,081,187 B2
Transversely-excited film bulk acoustic resonator
Viktor Plesski, Gorgier (CH); Soumya Yandrapalli, Lausanne (CH); Robert B. Hammond, Santa Barbara, CA (US); Bryant Garcia, Belmont, CA (US); Patrick Turner, San Bruno, CA (US); Jesson John, Dublin, CA (US); and Ventsislav Yantchev, Sofia (BG)
Assigned to MURATA MANUFACTURING CO., LTD., Nagaokakyo (JP)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP)
Filed on Aug. 31, 2021, as Appl. No. 17/463,322.
Application 17/463,322 is a continuation of application No. 16/920,173, filed on Jul. 2, 2020, granted, now 11,139,794.
Application 16/920,173 is a continuation of application No. 16/438,121, filed on Jun. 11, 2019, granted, now 10,756,697, issued on Aug. 25, 2020.
Application 16/438,121 is a continuation in part of application No. 16/230,443, filed on Dec. 21, 2018, granted, now 10,491,192, issued on Nov. 26, 2019.
Claims priority of provisional application 62/753,815, filed on Oct. 31, 2018.
Claims priority of provisional application 62/748,883, filed on Oct. 22, 2018.
Claims priority of provisional application 62/741,702, filed on Oct. 5, 2018.
Claims priority of provisional application 62/701,363, filed on Jul. 20, 2018.
Claims priority of provisional application 62/685,825, filed on Jun. 15, 2018.
Prior Publication US 2021/0391844 A1, Dec. 16, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 9/02 (2006.01); H03H 3/04 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/56 (2006.01); H03H 3/02 (2006.01)
CPC H03H 9/02228 (2013.01) [H03H 3/04 (2013.01); H03H 9/02031 (2013.01); H03H 9/132 (2013.01); H03H 9/174 (2013.01); H03H 9/176 (2013.01); H03H 9/562 (2013.01); H03H 9/564 (2013.01); H03H 9/568 (2013.01); H03H 2003/023 (2013.01); H03H 2003/0442 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An acoustic resonator device comprising:
a piezoelectric layer;
an interdigital transducer (IDT) comprising interleaved fingers at the piezoelectric layer, the piezoelectric layer and the IDT configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer; and
a dielectric layer on the piezoelectric layer, the dielectric layer being over and between the interleaved fingers of the IDT,
wherein a resonance frequency of the acoustic resonator device has an inverse dependence on a thickness of the dielectric layer.