US 12,080,990 B2
Semiconductor laser device
Atsushi Yamaguchi, Kyoto (JP); and Koki Sakamoto, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Appl. No. 17/289,671
Filed by ROHM CO., LTD., Kyoto (JP)
PCT Filed Nov. 20, 2019, PCT No. PCT/JP2019/045434
§ 371(c)(1), (2) Date Apr. 28, 2021,
PCT Pub. No. WO2020/116165, PCT Pub. Date Jun. 11, 2020.
Claims priority of application No. 2018-227796 (JP), filed on Dec. 5, 2018.
Prior Publication US 2021/0408758 A1, Dec. 30, 2021
Int. Cl. H01S 5/02345 (2021.01); H01S 5/02315 (2021.01); H01S 5/042 (2006.01); H01S 5/06 (2006.01)
CPC H01S 5/02345 (2021.01) [H01S 5/02315 (2021.01); H01S 5/042 (2013.01); H01S 5/0608 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor laser device comprising:
a semiconductor laser element;
a switching element with a gate electrode, a source electrode and a drain electrode; and
a support member including a conductive part that forms a conduction path to the switching element and the semiconductor laser element and supports the semiconductor laser element and the switching element,
wherein the conductive part has a first section spaced apart from the semiconductor laser element,
the semiconductor laser device further comprising:
at least one first wire connected to the source electrode of the switching element and the semiconductor laser element; and
at least one second wire connected to the source electrode of the switching element and the first section of the conductive part.