CPC H01L 33/46 (2013.01) [H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/385 (2013.01); H01L 33/387 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01)] | 16 Claims |
1. A lateral structure light-emitting diode (LED) chip comprising:
a substrate;
a light-emitting structure disposed on the substrate and comprising an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, with the light-emitting structure including an L shaped cut-out area cut out from a single corner of the light-emitting structure in which the active layer and the first conductivity-type semiconductor layer are removed to expose a corresponding L shaped portion of the second conductivity-type semiconductor layer;
a pair of dielectric layers disposed above the light-emitting structure with one of the pair of dielectric layers being disposed in the cut-out area;
a pair of wire bond pads disposed on the pair of dielectric layers, respectively, wherein the pair of wire bonds comprise a first wire bond pad disposed above the first conductivity-type semiconductor layer and a second wire bond pad disposed above the second conductivity-type semiconductor layer and in the cut-out area; and
a doped wiring extension extending from the second wire bond pad and into the light-emitting structure.
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