US 12,080,827 B2
Radiation-emitting semiconductor chip
Fabian Kopp, Penang (MY); Attila Molnar, Penang (MY); Bjoern Muermann, Regensburg (DE); and Franz Eberhard, Regensburg (DE)
Assigned to OSRAM OLED GmbH, Regensburg (DE)
Filed by OSRAM OLED GmbH, Regensburg (DE)
Filed on Mar. 17, 2023, as Appl. No. 18/186,037.
Application 18/186,037 is a continuation of application No. 17/480,920, filed on Sep. 21, 2021, granted, now 11,631,783.
Application 17/480,920 is a continuation of application No. 16/310,787, granted, now 11,164,994, issued on Nov. 2, 2021, previously published as PCT/EP2017/065715, filed on Jun. 26, 2017.
Claims priority of application No. 102016112587.3 (DE), filed on Jul. 8, 2016.
Prior Publication US 2023/0231080 A1, Jul. 20, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/46 (2010.01); H01L 33/14 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01L 33/08 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/14 (2013.01) [H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H01L 33/08 (2013.01); H01L 33/38 (2013.01); H01L 33/42 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A radiation-emitting semiconductor chip comprising:
a semiconductor body having an active region configured to generate radiation;
a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area;
a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in a plan view of the radiation-emitting semiconductor chip;
a current distribution layer electrically conductively connected to the first contact layer;
a connection layer electrically conductively connected to the first contact layer via the current distribution layer; and
an insulation layer containing a dielectric material,
wherein the insulation layer is arranged in places between the connection layer and the current distribution layer,
wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and
wherein edge regions of the insulation layer comprise more openings than a central region of the insulation layer.
 
15. A radiation-emitting semiconductor chip comprising:
a semiconductor body having an active region configured to generate radiation;
a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area;
a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip;
a current distribution layer electrically conductively connected to the first contact layer;
a connection layer electrically conductively connected to the first contact layer via the current distribution layer; and
an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer,
wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another,
wherein edge regions of the insulation layer are provided with more openings than a central region of the insulation layer, and
wherein the insulation layer covers at least 90% of an entire base area of the radiation-emitting semiconductor chip.