US 12,080,826 B2
Display device and method of manufacturing the same
Joon Seok Park, Yongin-si (KR); Myoung Hwa Kim, Seoul (KR); Tae Sang Kim, Seoul (KR); Yeon Keon Moon, Hwaseong-si (KR); Geun Chul Park, Suwon-si (KR); Jun Hyung Lim, Seoul (KR); and Hye Lim Choi, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR)
Filed on Feb. 9, 2021, as Appl. No. 17/171,451.
Claims priority of application No. 10-2020-0047607 (KR), filed on Apr. 20, 2020.
Prior Publication US 2021/0328102 A1, Oct. 21, 2021
Int. Cl. H01L 33/12 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/56 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/12 (2013.01) [H01L 27/156 (2013.01); H01L 33/0095 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A display device, comprising: a first gate electrode disposed on a substrate; a buffer layer disposed on the first gate electrode; a first active pattern disposed on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor; a source pattern and a drain pattern respectively disposed on ends of the first active pattern; an insulation layer overlapping the source pattern and the drain pattern on the buffer layer; an oxygen supply pattern disposed on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern; a second active pattern disposed on the insulation layer and completely spaced apart from the oxygen supply pattern in a direction parallel to a main surface of the substrate, the second active pattern including: a channel region; and a source region and a drain region respectively disposed on ends of the channel region; an insulation pattern disposed on the channel region of the second active pattern; and a second gate electrode disposed on the insulation pattern.