US 12,080,812 B2
Photoelectric detection substrate and manufacturing method thereof, and photoelectric detection device
Kui Liang, Beijing (CN); Tuo Sun, Beijing (CN); and Yichi Zhang, Beijing (CN)
Assigned to Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 17/432,422
Filed by Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Feb. 22, 2021, PCT No. PCT/CN2021/077213
§ 371(c)(1), (2) Date Aug. 19, 2021,
PCT Pub. No. WO2021/185025, PCT Pub. Date Sep. 23, 2021.
Claims priority of application No. 202010199954.5 (CN), filed on Mar. 20, 2020.
Prior Publication US 2023/0138242 A1, May 4, 2023
Int. Cl. H01L 31/0224 (2006.01); H01L 31/042 (2014.01); H01L 31/18 (2006.01)
CPC H01L 31/0224 (2013.01) [H01L 31/042 (2013.01); H01L 31/18 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A photoelectric detection substrate, comprising:
a base substrate;
a semiconductor layer arranged on the base substrate,
wherein the semiconductor layer is configured to convert an optical signal into an electrical signal;
an interdigital electrode arranged at a side of the semiconductor layer distal to the base substrate;
a flat layer arranged at a side of the interdigital electrode distal to the base substrate; and
a switching transistor arranged at a side of the flat layer distal to the base substrate, wherein the switching transistor is connected to the interdigital electrode through a via hole penetrating through the flat layer;
wherein the interdigital electrode comprises comb-shaped sensing sub-electrodes and comb-shaped biasing sub-electrodes, and the sensing sub-electrodes and the biasing sub-electrodes are arranged alternately;
wherein a side surface of the semiconductor layer distal to the base substrate is provided with a plurality of grooves in which the sensing sub-electrodes and the biasing sub-electrodes are arranged.