US 12,080,807 B2
III-nitride diode with a modified access region
Dongfei Pei, Waban, MA (US); and Bin Lu, Fremont, CA (US)
Assigned to Finwave Semiconductor, Inc., Belmont, MA (US)
Filed by Cambridge Electronics, Inc., Cambridge, MA (US)
Filed on Jun. 17, 2021, as Appl. No. 17/350,563.
Claims priority of provisional application 63/041,422, filed on Jun. 19, 2020.
Prior Publication US 2021/0399145 A1, Dec. 23, 2021
Int. Cl. H01L 29/872 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/402 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A diode structure for use in a III-Nitride (III-N) semiconductor device, comprising:
a channel layer;
a barrier layer, wherein electrons are formed at an interface between the channel layer and the barrier layer;
an anode electrode in Schottky contact with the barrier layer;
a cathode electrode disposed in an ohmic recess in contact with the barrier layer, wherein a region between the anode electrode and the cathode electrode is defined as an access region;
one or more electron density reduction regions disposed in the access region which extend at least partly beneath the anode electrode, wherein an electron density in the electron density reduction regions is reduced as compared to other portions of the access region; and
a field plate disposed above at least a portion of the electron density reduction regions, wherein portions of the field plate are separated from the electron density reduction region by a dielectric layer.