US 12,080,805 B2
Semiconductor chip
Hiroyuki Shimbo, Yokohama (JP)
Assigned to SOCIONEXT INC., Kanagawa (JP)
Filed by SOCIONEXT INC., Kanagawa (JP)
Filed on Jul. 25, 2023, as Appl. No. 18/358,689.
Application 18/358,689 is a continuation of application No. 17/724,143, filed on Apr. 19, 2022, granted, now 11,749,757.
Application 17/724,143 is a continuation of application No. 17/095,593, filed on Nov. 11, 2020, granted, now 11,335,814, issued on May 17, 2022.
Application 17/095,593 is a continuation of application No. 16/262,309, filed on Jan. 30, 2019, granted, now 10,868,192, issued on Dec. 15, 2020.
Application 16/262,309 is a continuation of application No. PCT/JP2017/025300, filed on Jul. 11, 2017.
Claims priority of application No. 2016-150960 (JP), filed on Aug. 1, 2016.
Prior Publication US 2024/0021735 A1, Jan. 18, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/00 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 27/118 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); H01L 27/12 (2006.01)
CPC H01L 29/78696 (2013.01) [H01L 21/8238 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/11807 (2013.01); H01L 29/06 (2013.01); H01L 29/0673 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/775 (2013.01); H01L 21/823412 (2013.01); H01L 21/823475 (2013.01); H01L 27/0207 (2013.01); H01L 2027/11874 (2013.01); H01L 27/1203 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor chip, comprising:
a first block including a first standard cell having a first nanowire field effect transistor (FET); and
a second block including a second standard cell having a second nanowire FET, wherein
the first nanowire FET includes:
at least two first nanowires extending in a first direction;
a first pair of pads that are respectively arranged at both ends of the first nanowires in the first direction, and each connected to the first nanowires; and
a first gate electrode that extends in a second direction perpendicular to the first direction, and surrounds a periphery of the first nanowires,
the first pair of pads are arranged at a first pitch in the first direction, and
the first nanowires are arranged at a second pitch in a third direction perpendicular to the first direction and the second direction;
the second nanowire FET includes:
at least two second nanowires extending in the first direction;
a second pair of pads that are respectively arranged at both ends of the second nanowires in the first direction, and each connected to the second nanowires; and
a second gate electrode that extends in the second direction, and surrounds a periphery of the second nanowires,
the second pair of pads are arranged at the first pitch in the first direction, and
the second nanowires are arranged at the second pitch in the third direction; and
the first standard cell and the second standard cell have different sizes in the second direction from each other.