US 12,080,801 B2
Method of controlling oxygen vacancy concentration in a semiconducting metal oxide
Edmund G. Seebauer, Urbana, IL (US)
Assigned to THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, Urbana, IL (US)
Filed by The Board of Trustees of the University of Illinois, Urbana, IL (US)
Filed on Jan. 10, 2022, as Appl. No. 17/571,858.
Claims priority of provisional application 63/137,971, filed on Jan. 15, 2021.
Prior Publication US 2022/0231171 A1, Jul. 21, 2022
Int. Cl. H01L 29/78 (2006.01); C23C 22/82 (2006.01); C23C 22/83 (2006.01); C23F 1/30 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/7869 (2013.01) [C23C 22/82 (2013.01); C23C 22/83 (2013.01); C23F 1/30 (2013.01); H01L 21/32134 (2013.01); H01L 21/67075 (2013.01); H01L 27/1225 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of controlling oxygen vacancy concentration in a semiconducting metal oxide, the method comprising:
exposing a treated surface of a crystalline metal oxide to water at a temperature and pressure sufficient to maintain the water in a liquid phase, whereby, during the exposure:
a portion of the water is adsorbed onto the treated surface and dissociates into atomic oxygen and hydrogen, and
the atomic oxygen is injected into and diffuses through the crystalline metal oxide, thereby forming isolated oxygen interstitials and oxygen defect complexes,
wherein the isolated oxygen interstitials replace oxygen vacancies in the crystalline metal oxide.