providing a semiconductor structure including a fin protruding from a substrate, wherein the fin includes first semiconductor layers and second semiconductor layers alternatingly disposed in a vertical direction, and wherein the first and second semiconductor layers include different material compositions;

recessing the fin, thereby forming a source/drain (S/D) recess;

forming an S/D feature in the S/D recess;

trimming the S/D feature;

depositing a dielectric layer to cover the S/D feature;

forming a contact hole in the dielectric layer, thereby exposing a portion of the S/D feature; and

depositing a metal material in the contact hole, thereby forming a metal contact landing on the S/D feature.