| CPC H01L 29/7851 (2013.01) [H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/41791 (2013.01); H01L 29/66553 (2013.01)] | 20 Claims |
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1. A semiconductor device comprising:
an active region disposed on a substrate, the active region extending in a first direction;
a plurality of channel layers disposed on the active region, the plurality of channel layers spaced apart from each other along a second direction;
gate electrodes disposed on the substrate, the gate electrodes intersecting the active region and the plurality of channel layers, extending in a third direction, and surrounding the plurality of channel layers;
a source/drain region disposed on the active region on at least one side of the gate electrodes, the source/drain region contacting the plurality of channel layers; and
a contact structure disposed between the gate electrodes, the contact structure extending in the second direction and contacting the source/drain region,
wherein the source/drain region includes a recess region recessed from an upper portion of the source/drain region,
wherein the contact structure includes a metal-semiconductor layer disposed to fill the recess region and a contact plug disposed on the metal-semiconductor layer,
wherein a lower surface of the metal-semiconductor layer is located at a level lower than an uppermost channel layer among the plurality of channel layers, and
wherein an uppermost surface of the metal-semiconductor layer is located at a level lower than the contact plug.
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