US 12,080,787 B2
High electron mobility transistor and method for fabricating the same
Po-Yu Yang, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Feb. 14, 2022, as Appl. No. 17/671,549.
Claims priority of application No. 202210041535.8 (CN), filed on Jan. 14, 2022.
Prior Publication US 2023/0231044 A1, Jul. 20, 2023
Int. Cl. H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 21/0217 (2013.01); H01L 29/66462 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for fabricating a high electron mobility transistor (HEMT), comprising:
forming a buffer layer on a substrate;
forming a barrier layer on the buffer layer;
forming a p-type semiconductor layer on the barrier layer;
forming a compressive stress layer adjacent to one side of the p-type semiconductor layer; and
forming a tensile stress layer adjacent to another side of the p-type semiconductor layer.