CPC H01L 29/7786 (2013.01) [H01L 21/0217 (2013.01); H01L 29/66462 (2013.01)] | 12 Claims |
1. A method for fabricating a high electron mobility transistor (HEMT), comprising:
forming a buffer layer on a substrate;
forming a barrier layer on the buffer layer;
forming a p-type semiconductor layer on the barrier layer;
forming a compressive stress layer adjacent to one side of the p-type semiconductor layer; and
forming a tensile stress layer adjacent to another side of the p-type semiconductor layer.
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