US 12,080,784 B2
Semiconductor device and method of controlling same
Tomoko Matsudai, Shibuya Tokyo (JP); Yoko Iwakaji, Meguro Tokyo (JP); and Takeshi Suwa, Kawasaki Kanagawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Jan. 26, 2023, as Appl. No. 18/101,712.
Application 17/383,837 is a division of application No. 16/573,593, filed on Sep. 17, 2019, granted, now 11,101,375, issued on Aug. 4, 2021.
Application 18/101,712 is a continuation of application No. 17/383,837, filed on Jul. 23, 2021, granted, now 11,594,622.
Claims priority of application No. 2019-050702 (JP), filed on Mar. 19, 2019; and application No. 2019-166842 (JP), filed on Sep. 13, 2019.
Prior Publication US 2023/0170405 A1, Jun. 1, 2023
Int. Cl. H01L 29/739 (2006.01); H01L 23/522 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H03K 17/16 (2006.01); H03K 17/60 (2006.01)
CPC H01L 29/7397 (2013.01) [H01L 23/5228 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/7393 (2013.01); H01L 29/7395 (2013.01); H03K 17/16 (2013.01); H03K 17/60 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor part provided with first and second surfaces, the second surface being positioned on a side opposite to the first surface;
a first electrode provided on the first surface;
a second electrode provided on the second surface;
first to third control electrodes each provided at the second surface side of the semiconductor part with a trench gate structure; and
first to third control pads electrically connected to the first to third control electrodes, respectively, the first control pad being electrically connected to at least a first control electrode, the second control pad being electrically connected to at least a second control electrode, the third control pad being electrically connected to at least a third control electrode, the first to third control pads being electrically isolated from each other so that, while a prescribed voltage is applied between the first and second electrodes,
a first on-voltage and a first off-voltage are applied between the first control pad and the second electrode, the first on-voltage being applied until the first off-voltage being applied, the first on-voltage being higher than a threshold voltage of the first control electrode, the first off-voltage being lower than the threshold voltage of the first control electrode,
a second on-voltage and a second off-voltage are applied between the second control pad and the second electrode, the second on-voltage being applied until the second off-voltage being applied, the second off-voltage being applied before the first off-voltage being applied between the first control pad and the second electrode, the second on-voltage being higher than a threshold voltage of the second control electrode, the second off-voltage being lower than the threshold voltage of the second control electrode, and
a third on-voltage and a third off-voltage are applied between the third control pad and the second electrode, the third on-voltage being applied until the third off-voltage being applied, the third off-voltage being applied before the first off-voltage being applied between the first control pad and the second electrode, the third on-voltage being higher than a threshold voltage of the third control electrode, the third off-voltage being lower than the threshold voltage of the third control electrode and higher than the second off-voltage.