US 12,080,761 B2
Fully strained channel
Shahaji B. More, Zhubei (TW); Huai-Tei Yang, Hsin-Chu (TW); Zheng-Yang Pan, Zhubei (TW); Shih-Chieh Chang, Taipei (TW); Chun-Chieh Wang, Kaohsiung (TW); and Cheng-Han Lee, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 24, 2022, as Appl. No. 17/582,727.
Application 17/582,727 is a division of application No. 16/741,607, filed on Jan. 13, 2020, granted, now 11,233,123.
Application 16/741,607 is a division of application No. 15/719,046, filed on Sep. 28, 2017, granted, now 10,535,736, issued on Jan. 14, 2020.
Prior Publication US 2022/0149157 A1, May 12, 2022
Int. Cl. H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/74 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/1054 (2013.01) [H01L 21/02057 (2013.01); H01L 21/02645 (2013.01); H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/74 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/0924 (2013.01); H01L 27/0928 (2013.01); H01L 29/0653 (2013.01); H01L 29/1083 (2013.01); H01L 29/66795 (2013.01); H01L 29/78 (2013.01); H01L 29/7842 (2013.01); H01L 29/7851 (2013.01); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 21/02639 (2013.01); H01L 21/02661 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure, comprising:
a fin formed on a substrate, wherein the fin comprises:
an n-type doped region formed on a top portion of the substrate;
a silicon epitaxial layer on the n-type doped region; and
an epitaxial stack on the silicon epitaxial layer, wherein the epitaxial stack comprises:
a silicon-based seed layer in physical contact with the silicon epitaxial layer;
a first silicon germanium epitaxial sub-layer with a first germanium concentration that is substantially constant through a thickness of the first silicon germanium epitaxial sub-layer perpendicular to the substrate; and
a second silicon germanium epitaxial sub-layer with a second germanium concentration that is substantially constant through a thickness of the second silicon germanium epitaxial sub-layer perpendicular to the substrate, wherein the first germanium concentration is different from the second germanium concentration;
a liner surrounding the epitaxial stack; and
a dielectric surrounding the liner.