US 12,080,754 B2
Semiconductor device with assistant layer and method for fabricating the same
Tse-Yao Huang, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Jul. 14, 2022, as Appl. No. 17/864,468.
Prior Publication US 2024/0021665 A1, Jan. 18, 2024
Int. Cl. H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/87 (2013.01) [H01L 21/02532 (2013.01); H01L 21/76251 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first substrate;
a capacitor structure positioned on the first substrate and comprising an exposed portion;
a contact structure deposited on the exposed portion;
an assistant layer positioned between the contact structure and the exposed portion;
a bonding structure positioned on the contact structure; wherein the assistant layer comprises germanium or silicon germanium, wherein the exposed portion comprises silicon and/or germanium with substantially no oxygen and nitrogen;
a first dielectric layer positioned on the first substrate, a higher dielectric layer positioned on the first dielectric layer, and a second dielectric layer positioned on the higher dielectric layer, wherein the capacitor structure is positioned along the first dielectric layer and the higher dielectric layer, and extending upwardly to the second dielectric layer, wherein the contact structure is positioned in the second dielectric layer; and
a lower dielectric layer positioned between the first substrate and the first dielectric layer;
wherein the first dielectric layer and the second dielectric layer comprise the same material;
wherein the first dielectric layer consists essentially of silicon oxide;
wherein the lower dielectric layer and the higher dielectric layer comprise the same material;
wherein the higher dielectric layer consists essentially of silicon nitride;
wherein a ratio of a width of the exposed portion to a width of the contact structure is between about 0.3 and about 0.7.