US 12,080,753 B2
Device structure with a redistribution layer and a buffer layer
Tsung-Chieh Hsiao, Changhua (TW); Hsiang-Ku Shen, Hsinchu (TW); Yuan-Yang Hsiao, Taipei (TW); Ying-Yao Lai, Hsinchu (TW); and Dian-Hau Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 19, 2023, as Appl. No. 18/211,561.
Application 18/211,561 is a division of application No. 17/368,343, filed on Jul. 6, 2021, granted, now 11,715,756.
Claims priority of provisional application 63/173,144, filed on Apr. 9, 2021.
Prior Publication US 2023/0335578 A1, Oct. 19, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/60 (2013.01) [H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/13024 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19104 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device structure, comprising:
a structure;
a first passivation layer disposed on the structure;
a buffer layer disposed on the first passivation layer;
a barrier layer disposed on a first portion of the buffer layer;
a redistribution layer disposed over the barrier layer;
an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer; and
a second passivation layer disposed on a second portion of the buffer layer, wherein the second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.