a substrate;

an LED structure provided on the substrate comprising a plurality of Group III-nitride layers including:

a p-type semiconductor layer;

an n-type semiconductor layer; and

an active layer between the p-type semiconductor layer and the n-type semiconductor layer,

wherein each of the plurality of Group III-nitride layers comprises a crystalline Group III-nitride,

the LED structure having a sidewall which extends in a plane orthogonal to a (0 0 0 1) crystal plane of the Group III-nitride layers;

a passivation layer provided on the sidewall of the LED structure such that the passivation layer covers the active layer of the LED structure, the passivation layer comprising a crystalline Group Ill-nitride with a bandgap higher than a bandgap of the active layer;

wherein

the LED structure is shaped such that the sidewall of the LED structure is aligned with a non-polar crystal plane of each the Group Ill-nitride layers of the LED structure.