US 12,080,743 B2
Multilevel semiconductor device and structure with image sensors and wafer bonding
Zvi Or-Bach, Haifa (IL); Deepak C. Sekar, Sunnyvale, CA (US); and Brian Cronquist, Klamath Falls, OR (US)
Assigned to Monolithic 3D Inc., Klamath Falls, OR (US)
Filed by Monolithic 3D Inc., Klamath Falls, OR (US)
Filed on Feb. 4, 2024, as Appl. No. 18/432,035.
Application 18/432,035 is a continuation in part of application No. 18/382,463, filed on Oct. 20, 2023, granted, now 11,929,372.
Application 18/382,463 is a continuation in part of application No. 18/141,975, filed on May 1, 2023, granted, now 11,869,915, issued on Jan. 9, 2024.
Application 18/141,975 is a continuation in part of application No. 18/105,881, filed on Feb. 6, 2023, granted, now 11,855,114, issued on Dec. 26, 2023.
Application 18/105,881 is a continuation in part of application No. 17/951,545, filed on Sep. 23, 2022, granted, now 11,605,663, issued on Mar. 14, 2023.
Application 17/951,545 is a continuation in part of application No. 17/844,687, filed on Jun. 20, 2022, granted, now 11,488,997, issued on Nov. 1, 2022.
Application 17/844,687 is a continuation in part of application No. 17/402,527, filed on Aug. 14, 2021, granted, now 11,404,466, issued on Aug. 2, 2022.
Application 17/402,527 is a continuation in part of application No. 17/317,894, filed on May 12, 2021, granted, now 11,133,344, issued on Sep. 28, 2021.
Application 17/317,894 is a continuation in part of application No. 17/143,956, filed on Jan. 7, 2021, granted, now 11,043,523, issued on Jun. 22, 2021.
Application 17/143,956 is a continuation in part of application No. 17/121,726, filed on Dec. 14, 2020, granted, now 10,978,501, issued on Apr. 13, 2021.
Application 17/121,726 is a continuation in part of application No. 17/027,217, filed on Sep. 21, 2020, granted, now 10,943,934, issued on Mar. 9, 2021.
Application 17/027,217 is a continuation in part of application No. 16/860,027, filed on Apr. 27, 2020, granted, now 10,833,108, issued on Nov. 10, 2020.
Application 16/860,027 is a continuation in part of application No. 15/920,499, filed on Mar. 14, 2018, granted, now 10,679,977, issued on Jun. 9, 2020.
Application 15/920,499 is a continuation in part of application No. 14/936,657, filed on Nov. 9, 2015, granted, now 9,941,319, issued on Apr. 10, 2018.
Application 14/936,657 is a continuation in part of application No. 13/274,161, filed on Oct. 14, 2011, granted, now 9,197,804, issued on Nov. 24, 2015.
Application 13/274,161 is a continuation in part of application No. 12/904,103, filed on Oct. 13, 2010, granted, now 8,163,581, issued on Apr. 24, 2012.
Prior Publication US 2024/0178257 A1, May 30, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/544 (2006.01)
CPC H01L 27/14634 (2013.01) [H01L 23/481 (2013.01); H01L 23/544 (2013.01); H01L 24/08 (2013.01); H01L 27/14601 (2013.01); H01L 27/14616 (2013.01); H01L 27/14647 (2013.01); H01L 2223/54426 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated device, the device comprising:
a first level comprising a first mono-crystal layer, said first mono-crystal layer comprising a plurality of single crystal transistors;
an overlying oxide disposed on top of said first level;
a second level comprising a second mono-crystal layer, said second level overlaying said oxide,
wherein said second mono-crystal layer comprises a plurality of image sensors,
wherein said second level is bonded to said first level comprising an oxide to oxide bond;
a plurality of pixel control circuits;
a third level disposed underneath said first level,
wherein said third level comprises a plurality of third transistors,
wherein said plurality of third transistors each comprise a single crystal channel; and
a plurality of memory circuits.