US 12,080,739 B2
Global shutter sensor systems and related methods
Manuel H. Innocent, Wezemaal (BE); Tomas Geurts, Haasrode (BE); and David T. Price, Gresham, OR (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Sep. 23, 2020, as Appl. No. 17/029,682.
Prior Publication US 2022/0093667 A1, Mar. 24, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14623 (2013.01) [H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a photodiode comprised in a second epitaxial layer of a semiconductor substrate;
a light shield coupled over the photodiode; and
a first epitaxial layer located in one or more openings in the light shield;
wherein the first epitaxial layer and the second epitaxial layer form a single crystal.