a semiconductor substrate of a first conductivity type;

a first semiconductor layer of a second conductivity type that is located above the semiconductor substrate and forms a junction with the semiconductor substrate in a first area, the second conductivity type being different from the first conductivity type; and

a second semiconductor layer of the second conductivity type that is located above the semiconductor substrate in a second area outward of the first area, the second semiconductor layer having an impurity concentration lower than an impurity concentration of the first semiconductor layer, wherein

the semiconductor substrate includes a first junction portion,

the first semiconductor layer includes a second junction portion having a higher impurity concentration than a remaining portion of the first semiconductor layer, the second junction portion being joined to the first junction portion,

the second semiconductor layer extends to a level below an interface between the first junction portion-and the second junction portion-in a thickness direction of the semiconductor substrate, and

the second semiconductor layer is in contact with both the first junction portion and the second junction portion.