CPC H01L 27/14607 (2013.01) [G01S 17/89 (2013.01); H01L 27/14623 (2013.01)] | 28 Claims |
1. A photoelectric conversion apparatus comprising:
a first chip including a first semiconductor element layer including a plurality of pixel circuits arranged in rows and columns; and
a second chip including a second semiconductor element layer,
wherein the first chip and the second chip are bonded by a plurality of metal bonding portions between the first semiconductor element layer and the second semiconductor element layer,
wherein the plurality of pixel circuits includes a first pixel block including n pixel circuits, where n is an integer larger than or equal to 3, a second pixel block including a same number of pixel circuits as the first pixel block, and a third pixel block including the same number of pixel circuits as the first pixel block,
wherein the plurality of metal bonding portions includes first metal bonding portions connecting the first semiconductor element layer and the second semiconductor element layer, and
wherein an arrangement pattern in the first pixel block of the first metal bonding portions arranged at positions overlapping the first pixel block in a planar view and an arrangement pattern in the second pixel block of the first metal bonding portions arranged at positions overlapping the second pixel block in a planar view are different, and
at least three adjacent pixel blocks, each of the at least three adjacent pixel blocks having pixel circuits in the plurality of pixel circuits arranged in one row, have arrangement patterns of metal bonding portions different from each other.
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