US 12,080,710 B2
Semiconductor devices and methods of fabricating the same
Kyooho Jung, Seoul (KR); Young-Lim Park, Anyang-si (KR); Changmu An, Osan-si (KR); Hongseon Song, Suwon-si (KR); and Yukyung Shin, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 29, 2021, as Appl. No. 17/361,418.
Claims priority of application No. 10-2020-0119384 (KR), filed on Sep. 16, 2020.
Prior Publication US 2022/0085010 A1, Mar. 17, 2022
Int. Cl. H01L 27/08 (2006.01); H01L 49/02 (2006.01)
CPC H01L 27/0805 (2013.01) [H01L 28/60 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a bottom electrode, a dielectric layer, and a top electrode sequentially stacked,
wherein the bottom electrode includes:
a main region;
a first doping region between the main region and the dielectric layer and contacting the dielectric layer; and
a second doping region between the first doping region and the main region,
wherein each of the first and second doping regions includes oxygen and a metallic dopant, and the second doping region includes nitrogen,
wherein the main region is devoid of the metallic dopant, and
wherein an oxygen concentration in the second doping region is lower than an oxygen concentration in the first doping region.