US 12,080,706 B2
Semiconductor device for a low-loss antenna switch
Jun-De Jin, Hsinchu (TW); and Tzu-Jin Yeh, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jun. 29, 2022, as Appl. No. 17/853,616.
Application 17/853,616 is a division of application No. 16/874,536, filed on May 14, 2020, granted, now 11,380,680.
Claims priority of provisional application 62/873,650, filed on Jul. 12, 2019.
Prior Publication US 2022/0328473 A1, Oct. 13, 2022
Int. Cl. H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01)
CPC H01L 27/0629 (2013.01) [H01L 29/0653 (2013.01); H01L 29/4238 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate comprising a non-doped region;
a first metal-oxide-semiconductor device extending into the substrate, wherein the first metal-oxide-semiconductor device is adjacent to the non-doped region in a first direction;
at least one first resistor coupled to the first metal-oxide-semiconductor device,
wherein the at least one first resistor is disposed right above the non-doped region in a second direction perpendicular to the first direction, and
the at least one first resistor is further arranged in a first row aligned with the first metal-oxide-semiconductor device in the first direction in a plan view of the semiconductor device;
a second metal-oxide-semiconductor device extending into the substrate, and separated from the first metal-oxide-semiconductor device along a third direction different from the first and second directions; and
at least one second resistor disposed right above the non-doped region and arranged in a second row aligned with the second metal-oxide-semiconductor device in the first direction.