US 12,080,701 B2
Semiconductor package
Sanguk Kim, Cheonan-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 15, 2023, as Appl. No. 18/210,132.
Application 18/210,132 is a continuation of application No. 17/225,375, filed on Apr. 8, 2021, granted, now 11,728,323.
Claims priority of application No. 10-2020-0116095 (KR), filed on Sep. 10, 2020.
Prior Publication US 2023/0326916 A1, Oct. 12, 2023
Int. Cl. H01L 25/18 (2023.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01)
CPC H01L 25/18 (2013.01) [H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 24/06 (2013.01); H01L 24/73 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/06515 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/73204 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/3511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a redistribution structure;
a ground bump and a signal bump on a lower surface of the redistribution structure;
a frame on an upper surface of the redistribution structure, the frame including a ground connection pattern electrically connected to the ground bump and a signal connection pattern electrically connected to the signal bump;
an application processor (AP) chip inside a hole configured to pass through the frame;
a molding on the upper surface of the redistribution structure, the molding covering the AP chip and the frame;
a conductive layer on the molding;
an upper insulating layer on the conductive layer;
a first opening passing through the upper insulating layer and exposing an upper surface of the conductive layer;
a second opening overlapping the first opening in a top view, the second opening passing through the conductive layer and exposing the ground connection pattern; and
a third opening passing through the upper insulating layer and exposing the signal connection pattern.