US 12,080,699 B2
Semiconductor device
Uidam Jung, Suwon-si (KR); Youngbum Woo, Hwaseong-si (KR); Byungkyu Kim, Seoul (KR); Eunji Kim, Seoul (KR); and Seungwoo Paek, Yongin-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 10, 2022, as Appl. No. 18/054,172.
Application 18/054,172 is a division of application No. 17/030,887, filed on Sep. 24, 2020, granted, now 11,527,524.
Claims priority of application No. 10-2019-0175041 (KR), filed on Dec. 26, 2019.
Prior Publication US 2023/0067443 A1, Mar. 2, 2023
Int. Cl. H01L 25/18 (2023.01); H01L 23/00 (2006.01); H01L 27/11582 (2017.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01)
CPC H01L 25/18 (2013.01) [H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H01L 2224/0557 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/29186 (2013.01); H01L 2224/32145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an insulating structure;
a plurality of horizontal layers vertically stacked and spaced apart from each other in the insulating structure, each of the plurality of horizontal layers comprising a conductive material;
a conductive material pattern on the insulating structure; and
a vertical structure comprising a vertical portion penetrating through the plurality of horizontal layers, and a protruding portion extending from the vertical portion into the conductive material pattern in the insulating structure, wherein a width of the vertical portion is greater than a width of the protruding portion, and a side surface of the protruding portion is in contact with the conductive material pattern.