CPC H01L 25/105 (2013.01) [H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/0657 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/37001 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
an interposer extending in a first horizontal direction and a second horizontal direction, wherein the interposer includes a base substrate including a first surface and a second surface opposing the first surface, and a circuit layer disposed on the second surface and including a first region and a second region surrounding the first region, and the circuit layer includes an insulating member, a wiring structure disposed in the first region of the circuit layer within the insulating member, and a metal structure disposed in the second region of the circuit layer within the insulating member;
a first semiconductor chip centrally mounted on the interposer and connected to the wiring structure; and
at least one second semiconductor chip mounted on the interposer adjacent to the first semiconductor chip and connected to the wiring structure.
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