US 12,080,684 B2
Die stacks and methods forming same
Chen-Hua Yu, Hsinchu (TW); Chung-Hao Tsai, Huatan Township (TW); and Chuei-Tang Wang, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 24, 2022, as Appl. No. 17/808,774.
Application 17/080,130 is a division of application No. 16/373,027, filed on Apr. 2, 2019, granted, now 10,818,640, issued on Oct. 27, 2020.
Application 17/808,774 is a continuation of application No. 17/080,130, filed on Oct. 26, 2020, granted, now 11,380,655.
Prior Publication US 2022/0344306 A1, Oct. 27, 2022
Int. Cl. H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2023.01)
CPC H01L 25/0657 (2013.01) [H01L 21/563 (2013.01); H01L 21/566 (2013.01); H01L 21/76898 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/32 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02381 (2013.01); H01L 2924/1434 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a stacked structure, wherein forming the stacked structure comprising:
stacking a plurality of device dies as a die stack;
forming a plurality of through-vias, with overlying ones of the plurality of through-vias being electrically connecting to respective underlying ones of the plurality of through-vias;
forming a plurality of encapsulant regions, each encapsulating one of the plurality of device dies; and
forming a plurality of redistribution structures, each overlying and contacting one of the plurality of encapsulant regions, a corresponding one of the plurality of device dies, and a corresponding one of the plurality of through-vias, wherein the plurality of redistribution structures comprise a redistribution line comprising a first via physically contacting a metal pad of a device die in the plurality of device dies, and a second via physically contacting one of the plurality of through-vias; and
electrically connecting the stacked structure to a bottom die, wherein each of the plurality of device dies is electrically connected to the bottom die through the plurality of through-vias and corresponding ones of the plurality of redistribution structures.