US 12,080,682 B2
Semiconductor devices and methods of manufacturing semiconductor devices
Yi Seul Han, Incheon (KR); Tae Yong Lee, Gyeonggi-do (KR); Ji Yeon Ryu, Incheon (KR); Won Chul Do, Seoul (KR); Jin Young Khim, Seoul (KR); Shaun Bowers, Gilbert, AZ (US); and Ron Huemoeller, Gilbert, AZ (US)
Assigned to Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed by Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed on Feb. 6, 2023, as Appl. No. 18/105,970.
Application 18/105,970 is a continuation of application No. 16/918,074, filed on Jul. 1, 2020, granted, now 11,574,890.
Prior Publication US 2023/0187410 A1, Jun. 15, 2023
Int. Cl. H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01)
CPC H01L 25/0655 (2013.01) [H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/5385 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first base substrate comprising:
a first base dielectric structure and a first base conductive structure in the first base dielectric structure;
a second base dielectric structure over the first base dielectric structure, and a second base conductive structure in the second base dielectric structure; and
a third base conductive structure over the second base dielectric structure;
a first encapsulant covering a first lateral side of the first base substrate;
a redistribution structure (RDS) substrate over the first base substrate and comprising an RDS conductive structure coupled to the first base conductive structure;
a first electronic component over the RDS substrate and comprising a first component terminal coupled to the RDS conductive structure; and
a second encapsulant over the RDS substrate and covering a lateral side of the first electronic component.