US 12,080,681 B2
Package structure and method of fabricating the same
Wen-Wei Shen, Hsinchu (TW); Sung-Hui Huang, Yilan County (TW); and Shang-Yun Hou, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 30, 2022, as Appl. No. 17/853,949.
Application 17/853,949 is a continuation of application No. 16/903,392, filed on Jun. 17, 2020, granted, now 11,424,219.
Claims priority of provisional application 62/961,717, filed on Jan. 16, 2020.
Prior Publication US 2022/0336416 A1, Oct. 20, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/538 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2023.01); H01L 21/683 (2006.01)
CPC H01L 25/0655 (2013.01) [H01L 21/561 (2013.01); H01L 23/3157 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 21/563 (2013.01); H01L 21/6835 (2013.01); H01L 2221/68331 (2013.01); H01L 2221/68345 (2013.01)] 20 Claims
OG exemplary drawing
 
9. A structure, comprising:
an interconnection structure comprising a core portion and a protruding portion protruding out from the core portion, wherein a step height difference exists between a top surface of the core portion and a top surface of the protruding portion;
an insulating encapsulant disposed on the interconnection structure and covering the top surface of the core portion and the top surface of the protruding portion; and
a dielectric material layer disposed on the interconnection structure, wherein the dielectric material layer comprises a central portion and a flank portion, the central portion is disposed on a back surface of the core portion and the flank portion protrudes out from the central portion and is covering a back surface of the protruding portion, wherein the flank portion has a sloped surface that is covering and in direct contact with the insulating encapsulant and the protruding portion of the interconnection structure, and wherein outer sidewalls of the flank portion of the dielectric material layer are linearly aligned with sidewalls of the insulating encapsulant.