US 12,080,680 B2
Semiconductor device
Makoto Mizukami, Ibo Hyogo (JP); Tatsuya Hirakawa, Takasago Hyogo (JP); and Tomohiro Iguchi, Himeji Hyogo (JP)
Assigned to Kabushiki Kaisba Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Aug. 29, 2022, as Appl. No. 17/898,177.
Application 17/898,177 is a continuation of application No. 17/008,378, filed on Aug. 31, 2020, granted, now 11,462,508.
Claims priority of application No. 2020-052530 (JP), filed on Mar. 24, 2020.
Prior Publication US 2022/0415848 A1, Dec. 29, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/83 (2013.01) [H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/83439 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor layer;
a metal layer;
a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles and a region containing gold between the plurality of silver particles;
a first intermediate layer provided between the semiconductor layer and the bonding layer, the first intermediate layer containing nickel; and
a second intermediate layer provided between the first intermediate layer and the semiconductor layer, the second intermediate layer containing titanium,
wherein the region containing gold surrounds the plurality of silver particles.