US 12,080,672 B2
Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
Belgacem Haba, Saratoga, CA (US); Laura Wills Mirkarimi, Sunol, CA (US); Javier A. DeLaCruz, San Jose, CA (US); Rajesh Katkar, Milpitas, CA (US); Cyprian Emeka Uzoh, San Jose, CA (US); Guilian Gao, San Jose, CA (US); and Thomas Workman, San Jose, CA (US)
Assigned to ADEIA Semiconductor Bonding Technologies Inc., San Jose, CA (US)
Filed by ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed on May 14, 2020, as Appl. No. 16/874,527.
Claims priority of provisional application 62/906,608, filed on Sep. 26, 2019.
Prior Publication US 2021/0098412 A1, Apr. 1, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 24/32 (2013.01) [H01L 23/3107 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/83896 (2013.01)] 28 Claims
OG exemplary drawing
 
1. A method of forming a bonded structure, the method comprising:
forming a first dielectric layer on a first element and on a third element, the first dielectric layer being formed on an upper surface and a side surface of each of the first and the third elements;
forming a second dielectric layer on a second element and on a fourth element, the second dielectric layer being formed on an upper surface and a side surface of each of the second and fourth elements;
polishing a surface of the first dielectric layer; and
directly bonding the polished surface of a first portion of the first dielectric layer that is disposed on the first element to a first portion of the second dielectric layer that is disposed on the second element to form a first bonded structure without an adhesive, and directly bonding the polished surface of a second portion of the first dielectric layer that is disposed on the third element to a second portion of the second dielectric layer that is disposed on the fourth element to form a second bonded structure without an adhesive, wherein the first bonded structure is spaced from the second bonded structure by a gap.