US 12,080,651 B2
Three-dimensional micro-electro-mechanical, microfluidic, and micro-optical systems
Gregory Nolan Nielson, Lehi, UT (US)
Assigned to NIELSON SCIENTIFIC, LLC, Lehi, UT (US)
Appl. No. 17/040,430
Filed by Nielson Scientific, LLC, Lehi, UT (US)
PCT Filed Mar. 27, 2019, PCT No. PCT/US2019/024205
§ 371(c)(1), (2) Date Sep. 22, 2020,
PCT Pub. No. WO2019/191179, PCT Pub. Date Oct. 3, 2019.
Claims priority of provisional application 62/648,391, filed on Mar. 27, 2018.
Claims priority of provisional application 62/711,333, filed on Jul. 27, 2018.
Prior Publication US 2021/0020576 A1, Jan. 21, 2021
Int. Cl. H01L 23/538 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); G02B 6/12 (2006.01); G02B 6/28 (2006.01); H01L 27/06 (2006.01)
CPC H01L 23/5384 (2013.01) [B81B 7/007 (2013.01); B81B 7/0074 (2013.01); B81C 1/00119 (2013.01); G02B 6/12002 (2013.01); G02B 6/28 (2013.01); H01L 27/0688 (2013.01); B81B 2203/0338 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, where the semiconductor device is an interposer, and further where the semiconductor device comprises:
a bulk semiconductor element having a first surface and a second surface;
a waveguide disposed within the bulk semiconductor element, wherein the waveguide comprises a first end and a second end, and wherein the first end terminates on the first surface of the bulk semiconductor element, and wherein further the second end terminates on the first surface or the second surface of the bulk semiconductor element such that the second end is laterally offset from the first end;
a channel disposed within the bulk semiconductor element, the channel having an inlet and an outlet, the channel configured to accommodate a fluid, wherein the inlet of the channel terminates on the first surface of the bulk semiconductor element, and further wherein the outlet of the channel terminates on the first surface or the second surface of the bulk semiconductor element such that the outlet is laterally offset from the inlet; and
a via disposed within the bulk semiconductor element, the via comprising an electrically conductive material, the via having a first terminal portion and a second terminal portion, wherein the first terminal portion terminates on the first surface of the bulk semiconductor element, and wherein the second terminal portion terminates on the first surface or the second surface of the bulk semiconductor element such that the second terminal portion is laterally offset from the first terminal portion.