US 12,080,648 B2
Tungsten alloys in semiconductor devices
Yang Cao, Beaverton, OR (US); Akm Shaestagir Chowdhury, Portland, OR (US); and Jeff Grunes, Beaverton, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Nov. 2, 2021, as Appl. No. 17/517,472.
Application 17/517,472 is a continuation of application No. 15/300,569, granted, now 11,195,798, previously published as PCT/US2014/048274, filed on Jul. 25, 2014.
Prior Publication US 2022/0059467 A1, Feb. 24, 2022
Int. Cl. H01L 23/532 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/53261 (2013.01) [H01L 21/288 (2013.01); H01L 21/76843 (2013.01); H01L 21/76849 (2013.01); H01L 21/76877 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An integrated circuit structure, comprising;
a semiconductor substrate having a plurality of transistors thereon;
a layer of dielectric material above the semiconductor substrate, wherein the layer of dielectric material has a trench formed therein; and
a conducting alloy material, wherein the conducting alloy material fills the trench and is in direct contact with the layer of dielectric material, and wherein the conducting alloy material comprises cobalt and tungsten.