US 12,080,638 B2
Semiconductor device and method for manufacturing the same
Kuo-Chiang Ting, Hsinchu (TW); Chi-Hsi Wu, Hsinchu (TW); Shang-Yun Hou, Hsinchu (TW); Tu-Hao Yu, Hsin-Chu (TW); Chia-Hao Hsu, Hsinchu County (TW); Pin-Tso Lin, Hsinchu (TW); and Chia-Hsin Chen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 29, 2022, as Appl. No. 17/816,376.
Application 17/816,376 is a continuation of application No. 16/723,434, filed on Dec. 20, 2019, granted, now 11,476,184.
Application 16/723,434 is a continuation of application No. 15/707,301, filed on Sep. 18, 2017, granted, now 10,515,888, issued on Dec. 24, 2019.
Prior Publication US 2022/0367335 A1, Nov. 17, 2022
Int. Cl. H01L 23/498 (2006.01); H01L 21/683 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/49838 (2013.01) [H01L 21/6835 (2013.01); H01L 23/49816 (2013.01); H01L 23/49894 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 23/3128 (2013.01); H01L 23/3171 (2013.01); H01L 24/09 (2013.01); H01L 24/13 (2013.01); H01L 24/17 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/17505 (2013.01); H01L 2924/3511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
depositing a dielectric layer over a first carrier substrate;
forming a first interconnection layer over a first surface of the dielectric layer;
disposing an electronic component over the first interconnection layer;
bonding the electronic component to a second carrier substrate and releasing the first carrier substrate from the dielectric layer;
forming a plurality of conductive structures through the dielectric layer and electrically connected to the first interconnection layer subsequent to depositing the dielectric layer over the first carrier substrate, wherein each of the conductive structures has a tapered profile; and
forming a plurality of electrical conductors over a second surface of the dielectric layer and electrically connected to the plurality of conductive structures.