US 12,080,621 B2
Semiconductor device and method of manufacturing semiconductor device
Yoshiaki Takewaki, Tokyo (JP); and Keita Motoyama, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Aug. 30, 2021, as Appl. No. 17/460,962.
Claims priority of application No. 2020-196575 (JP), filed on Nov. 27, 2020.
Prior Publication US 2022/0173009 A1, Jun. 2, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/373 (2006.01)
CPC H01L 23/3735 (2013.01) [H01L 21/4807 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73265 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an insulating substrate with a metal circuit pattern formed in a surface thereof; and
a metal terminal bonded on the metal circuit pattern via a hard brazing material, wherein
protrusions are provided on the metal circuit pattern, and
the protrusions are in direct contact with the hard brazing material, and
no upper surface of each of the protrusions is covered with the hard brazing material.